2022-04-08
付艳龙，射线束技术与能源材料实验室博士后
Email: yanlongfu@mail.bnu.edu.cn 或 ylfu@bnu.edu.cn
研究领域
1) 离子与物质相互作用过程中的电子阻止本领及电子能损机制方面的研究；
2) 辐照损伤微观机制方面的研究（如不同缺陷对材料性能的影响）；
3) 在储能材料中不同浓度离子掺杂的模拟。
学习经历
2015/09-2020/06：博士，核科学与技术学院，北京师范大学
2011/09-2015/06：学士，物理与电子科学学院，大同大学
主持的科研项目
1) 国家自然科学基金项目，12147159，载能离子的电子阻止本领及电子能损机制的研究，2022/01-2022/12，主持
2) 北京师范大学博士后科研启动项目，110321001，基于TDDFT方法研究单粒子辐照材料的电子激发、转移和能损机制，2021/07-2023/06，主持
代表论文
[1] Yan-Long Fu, Zhong-Zheng Tang, Wei Cheng, Jia-Yong Zhong, and Feng-Shou Zhang*, Electronic stopping power and electronic energy-loss mechanism for a low-energy ion in TiN under channeling conditions, Phys. Rev. A, 105, 042818 (2022).
[2] Yan-Long Fu, Chang-Kai Li, Hai-Bo Sang, Wei Cheng*, and Feng-Shou Zhang*, Electronic stopping power under channeling conditions for slow ions in Ge using first-principles, Phys. Rev. A 102, 012803 (2020).
[3] Yan-Long Fu, Zhao-Jun Zhang, Chang-Kai Li, Hai-Bo Sang, Wei Cheng*, and Feng-Shou Zhang*, Electronic stopping power for slow ions in the low-hardness semimetal HgTe using first-principles calculations, J. Phys.: Condens. Matter 32,105701 (2020).
[4] Yan-Long Fu, Hai-Bo Sang, Wei Cheng*, and Feng-Shou Zhang*, Topological properties after light ion irradiation on Weyl semimetal niobium phosphide from first principles, Mater. Today Commun., 24, 100939 (2020).
[5] Yan-Long Fu, Chang-Kai Li, Zhao-Jun Zhang, Hai-Bo Sang, Wei Cheng*, and Feng-Shou Zhang*, Electronic properties of defects in Weyl semimetal tantalum arsenide, Chin. Phys. B 27, 097101 (2018).
[6] Jun Chen, Yan-Long Fu, Fang Sun, Zheng-Guang Hu, Xing Wang, Ting Zhang, Feng-Shou Zhang, Xiao-Ling Wu, Guo-An Cheng, and Rui-Ting Zheng*, Oxygen vacancies and phase tuning of self-supported black TiO2-X nanotube arrays for enhanced sodium storage, Chem. Eng. J. 400, 125784 (2020).
[7] Zhao-Jun Zhang, Yan-Long Fu, Wei Cheng*, and Feng-Shou Zhang*, Electronic properties of defects induced by hydrogen and helium radiation on Weyl semimetal niobium arsenic, Comput. Mater. Sci. 160, 9-15 (2019).
[8] Chang-Kai Li, Fei Mao, Feng Wang, Yan-Long Fu, Xiao-Ping Ouyang, and Feng-Shou Zhang*, Electronic stopping power of slow-light channeling ions in ZnTe from first principles, Phys. Rev. A 95, 052703 (2017).
[9] Chang-Kai Li, Fei Mao, Yan-Long Fu, Bing Liao, Xiao-Ping Ouyang, and Feng-Shou Zhang*, Electronic stopping power of slow H+ and He2+ ions in CdTe from first principle, Nucl. Instrum. Methods Phys. Res., Sect. B 392, 51-57 (2017).
[10] Wei Cheng, Yan-Long Fu, Min-Ju Ying, Feng-Shou Zhang*, Electronic properties of defects induced by H irradiation in tantalum phosphide, Chin. Phys. Lett. 34, 127101 (2017).
[11] Hui-Hui Yan, Yan-Long Fu, Wei Cheng*, and Feng-Shou Zhang*, Electronic properties of defects induced by hydrogen and helium radiation on semimetal MoTe2, Chem. Phys. 565, 111764 (2023).
[12] Feng-Shou Zhang*, Yan-Long Fu, Fei Mao, Chang-Kai Li, and Chao Zhang, Progress on microscopic mechanism of electronic energy loss in the interactions between low energy ions and matter, Journal of Beijing Normal University (Natural Science), 58(5), 755-762 (2022).
获奖情况
2021北京师范大学学术创新一等奖
2020北京师范大学优秀博士毕业生
学术交流
2021北京师范大学交叉科学前沿论坛，博士后学术沙龙最佳海报奖
2022北京师范大学珠海校区第四届交叉学科博士后论坛，获最佳海报奖
